MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing 1-0813 (technical revision)

1-0813 (technical revision)

SEMI E84-0301 (technical revision)

1  The purpose of this Standard is to standardize requirements for ammonium fluoride 40% used in the semiconductor industry and testing procedures to support those standards

UV cut performance

本標準應用在背光模組。標準中包含使用在背光模組元件的專用術語，以及背光模組工業、面板、和設備工業所用之檢驗和量測的專用術語。其他領域則由其他的

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing 1-0813 (technical revision)This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and