M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers Revision:SEMI M36-0699 - Inactive SEMI E30-0717 (technical revision)

SEMI E30-0717 (technical revision)

SEMI MF154-1105 (Reapproved 0611)

‘suggested’

SEMI MF84-1105 (technical revision)

本スタンダードは，global Liquid Chemical Distribution Systems Committeeで技術的に承認されている。現版は2001年8月3日，Japanese Regional Standards Committeeにて発行が承認された。2001年9月にwww

M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers Revision:SEMI M36-0699 - Inactive SEMI E30-0717 (technical revision)This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density GaAs wafers.