M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current by clarifying the positional relationship

by clarifying the positional relationship among equipment

5-0302 (Reapproved 0308)

org in August 2011

This marking symbol is marked in a manner and location to avoid affecting the user patterning process

This Test Method is particularly applicable to clean

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current by clarifying the positional relationshipShrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV