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FDP33N25 Transistor - N-MOSFET, 250V 20,4A 235W (TO220) Vognmand Helmholt Forskallingsbræt NB: I forordet til

$39.00

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Forskallingsbræt NB: I forordet til afsnit 11 vises belastningen ved forskellige anvendelsesmuligheder

iC40 og iCV40

Slags kabel: B7805A

Afstandsstykker han gevindlængde: 6mm

kompakt og moderne design: Ladestationen er designet til at passe problemfrit ind i ethvert miljø og har et moderne og kompakt design

FDP33N25 Transistor - N-MOSFET, 250V 20,4A 235W (TO220) Vognmand Helmholt Forskallingsbræt NB: I forordet tilTekniske detaljer: Producent (varemrke): ONSEMI Transistortype: N MOSFET Polarisering: Unipolr Drain source spnding (VDS): 250V Kontinuerlig drnstrm (ID): 20,4A Puls drnstrm: 132A Effektafledning (PD): 235W Hus: TO220AB Gate source spnding (VGS): 30V On state modstand (RDS(on)): 94 mOhm Montering: Printhul Portladning: 48nC Type kanal: Forstrket Specifications: Manufacturer: ONSEMI Type of transistor: N MOSFET Polarisation: Unipolar Drain source

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