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IRF630 Transistor - N-MOSFET 200V 5,7A 75W (TO220) Vognmand Avanceret Engineering

$24.00

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Avanceret Engineering

Denne G93 Globe pære har en rund form

Afstanden mellem hver pære er 16

at fortrykket opretholdes i længere tid

Comfort (varenr

IRF630 Transistor - N-MOSFET 200V 5,7A 75W (TO220) Vognmand Avanceret EngineeringTekniske detaljer: Producent (varemrke): STMicroelectronics Type transistor: N MOSFET Teknologi: MESH OVERLAY II Polarisering: unipolr Drain source spnding (VDS): 200V Kontinuerlig drinstrm (ID): 5,7A Effektafledning (Pd): 75W Hus: TO220 3 Gate source spnding (Vgs): 20V On state modstand: 400mOhm Montering: Printhul Type kanal: Forbedret Funktioner ved halvlederenheder: ESD beskyttet gate Specifications: Manufacturer: STMicroelectronics Type of

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