LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates Polishing: fine ground on both

Polishing: fine ground on both sides

005 Ohms/cm  (If you would like to measure the resistivity accurately

5 thickness +/-0

Set pressure low limit and high limit on digital pressure gauge

Composition

LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates Polishing: fine ground on bothLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100)