Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP - ALR101005S2 Max. current +1 mA Surface density 4

Surface density 4

The top of the sample holder is covered by Kapton film and tightened by PTFE O-ring

Crystal Structure

Polished surface: Two sides EPI polished via a special CMP procedure with Ra < 5 A

Boiling Point:         2162 °C

Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP - ALR101005S2 Max. current +1 mA Surface density 4Features: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties Wafer size: 10 mm x 10 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 o. R plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 2 sides polished Package: Each wafer is packed in 1000 class clean room with