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Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 Cd Specifications of MgO Substrate Size:
Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 Cd Specifications of MgO Substrate Size:
$17.52
Description
Specifications of MgO Substrate Size: 10mm x 10mm x 0
Polishing: one side polished
and rotary coating
Single crystal: Si
185 ohm-cm
Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 Cd Specifications of MgO Substrate Size:Specifications: Single crystal: Si Conductive type: N type, P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater
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 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 Cd Specifications of MgO Substrate Size:){kind=link}
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