50 Ohm.cm XRD One grain boundary is formedGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 Ohm.cm XRD One grain boundary is formed"> 50 Ohm.cm XRD One grain boundary is formedGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 Ohm.cm XRD One grain boundary is formed"> 50 Ohm.cm XRD One grain boundary is formedGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm XRD One grain boundary is formed – asequith.com

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Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm XRD One grain boundary is formed

$102.35

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50 Ohm.cm XRD One grain boundary is formed">
Description

One grain boundary  is formed under high temperature and pressure

The testing software (TC5

NRTL certification is available upon request at extra cost

it will provide larger discharging capability and longer service life for Li-Ion batteries

Structure:                     Hexagonal

Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm XRD One grain boundary is formedGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,

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