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Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110
50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110" loading="eager" fetchpriority="high" decoding="async"/>
Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110
$125.92
Description
Shipping Weight & Dimensions 110 lbs
To use inside the glove box
NO pressing powder with particle size LESS THAN 30 micron should be used
Do not use an air compressor when operating the unit in the glove box
Crystal Boundary: 36o ( +/-0
Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating Shipping Weight & Dimensions 110Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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