Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm Thermal Evaporation Construction Material

Construction Material

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

Polyfluortetraethylene (PTFE) made flange interior (only the flange interior will expose to the reaction chamber)

12 @ 100 oC

m 180mm 525m 5kg 280mm 333m 5kg 9

Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm Thermal Evaporation Construction MaterialSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z