Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs Excess liquid will leak into

Excess liquid will leak into the motor shaft and cause damage

Digital Controlled Infusion Syringe Pump and connection pipe (Not Included in the standard package)

Current Collector (Substrate) Aluminum foil Cathode Material Lithium-Manganese Oxide Dimensions 670mm(L) x 56mm(W) x 0

71 Array (Capacity):   13*20=250

constant voltage charge

Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs Excess liquid will leak intoSpecifications Growing Method: CZ Wafer Size: 10x10x0. 4 0. 5 mm Surface Polishing: two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater