Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) And then rinse with deionized

And then rinse with deionized water and anhydrous ethanol to ensure the surface of the Ni foam was well cleaned

The pressure inside the tube chamber will be kept within the desired range

Surface Quality

Update: Since Apr

Customized size asseambling is available upon request

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) And then rinse with deionizedGe Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other