50 ohm-cm Processing Tubes 18mm Coating The positive sideGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes 18mm Coating The positive side"> 50 ohm-cm Processing Tubes 18mm Coating The positive sideGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes 18mm Coating The positive side"> 50 ohm-cm Processing Tubes 18mm Coating The positive sideGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes 18mm Coating The positive side – asequith.com

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Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes 18mm Coating The positive side

$120.17

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50 ohm-cm Processing Tubes 18mm Coating The positive side">
Description

18mm Coating The positive side of the casing is coated with aluminum Al coating thickness < 0

2mm Optional  Please click the picture below to order Al spacer and spring Application Excellent for developing new Li-ion rechargeable batteries up to 5

Porosity: 50%-98%

Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres

Vibration Frequency: 3000 per minute

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes 18mm Coating The positive sideGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

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