GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um Orientation 111 2mm)x100 mm (+/-0

2mm)x100 mm (+/-0

Thermal Expansion: 7

Voltage rating: 600 volts

One electric strip built-in chamber allows the use of electricity inside the chamber

1 mm ( or 1" x 1" x 1

GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um Orientation 111 2mm)x100 mm (+/-0GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 5mmx5mm Substrate Sapphire, Orientation R (00. 1) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface