50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)"> 50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)"> 50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A) – asequith.com

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Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)

$120.75

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50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)">
Description

Crystal  Structure /Lattice Constant(A)

6) E18 /cm^3

Silicon Carbide

Single crystal CdWO4

MTI fully sintered diamond blade is hot pressed and sintered by full diamond powder with the five times longer service life than ordinary edge sintered diamond blades

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy Crystal Structure /Lattice Constant(A)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,

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