LSAT (100) 10x10x0.5 mm Square Substrate - 2 side epi polished, Anneaing in oxygen - LSATa101005S2brown Dry Room One grain boundary is formed

One grain boundary  is formed under high temperature and pressure

Applied in the rub and plastic as bulking agent

P/N Description Qty UP820-01 Aluminum alloy master plate 8" dia lapping plate 2 set UP820-02 8" dia

The dielectric properties of LaAlO3  crystal are well-suitable for low-loss microwave and dielectric resonance applications

Top Cap: 15

LSAT (100) 10x10x0.5 mm Square Substrate - 2 side epi polished, Anneaing in oxygen - LSATa101005S2brown Dry Room One grain boundary is formedLSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with peroviskite structure and twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive