Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs Heat Flow thru Glass: TEC

Heat Flow thru Glass: TEC 70 at 27 deg C/ air space/TEC 15 glass at -20 C: 86 W/m^2

temperature resolution is ±3

Do not use this die set for pressing powder with a particle size of 30 microns or smaller

83") Analog-to-digital technique Dual slope Internal resolution 15 bits Read rate 3/sec Polarity Automatic Max error process  ±0

24o Bi-LSAT Substrate Specifications

Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs Heat Flow thru Glass: TECSpecifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x10 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater