GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1 GGG & SGGG Mobility: 150 cm^2/Vs

Mobility: 150 cm^2/Vs

One set of ring cutting dies is included in the standard package

4840 °F)

Specifications: Material:          GdScO3

50 g/pcs Note

GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1 GGG & SGGG Mobility: 150 cm^2/VsWafer Specifications:. Size: 10x10 x 0. 5mm, Orientation: (100) Dopping: undoped, Conducting type: P type. Polish: one side polished by CMP Packing: 1000 class clean room in a single wafer container Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Grown by a special LEC technique , EPD :<10^4 cm2. Carrier concentration: ( 1 2)x10^17 cm^ 3 Mobility: 600 700 cm^2 Vs EPD <3000 cm^ 2 Thermal Expansion: 6.