Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001 XRD Click to see the application

Click to see the application for gas disposal Option part

3mm Width Aluminum Tab as Positive Terminal for Welding on Cylindrical Cell Electrode Strip

92 HF (ppm) 60 Moisture (ppm) 4

It includes 32 pieces of 10mm ID pressing die

Outside Diameter 1/4" Inside Diameter 0

Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001 XRD Click to see the applicationSingle crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 008 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 35 0. 4 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers