Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US CdWO4 If you have any question

If you have any question on IP conflict

40KHz - MSK-800W

The centrifugal  EQ-DM-0636 is designed for separating dense substances from the media along the radial direction

5mm(D) x 4

Thermal Conductivity:  4

Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US CdWO4 If you have any questionSingle crystal Si Conductivity: P type ( B doped) Size: 5" diameter x 0. 625 mm Orientation: (111) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: One side polished Surface roughness: < 5A Packing : Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing