Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >1,000 ohm-cm - SiUa101D05C1R1000 Cold dislocation
$135.22
Description
dislocation
Size: 3" dia x 0
Size: 10 mm x 10 mm x 0
made of stainless steel ( SS304) with PP sealing O-ring
Product Dimensions 800mm(L) x 580mm(W) x 1200mm(H) Operation Manual & Video
Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >1,000 ohm-cm - SiUa101D05C1R1000 Cold dislocationSingle crystal: Si Conductivity: Undoped Type: N Resistivity:>1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation:(100) Polish: One side polished Surface roughness:< 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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