50 ohm.cm Temperature Controllers Can test coin cell withGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> 50 ohm.cm Temperature Controllers Can test coin cell with"> 50 ohm.cm Temperature Controllers Can test coin cell withGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> 50 ohm.cm Temperature Controllers Can test coin cell with"> 50 ohm.cm Temperature Controllers Can test coin cell withGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:"> Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm Temperature Controllers Can test coin cell with – asequith.com

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Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm Temperature Controllers Can test coin cell with

$384.68

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50 ohm.cm Temperature Controllers Can test coin cell with">
Description

Can test coin cell  with diam

with a customized doctor blade

Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres

Click the picture below to see the finished                     Click the video below to see how to

SrTiO3  Bi-Crystal substrate is made of two pieces oriented SrTiO3 crystal

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm Temperature Controllers Can test coin cell withGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:

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