+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Cutting Blade – asequith.com

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InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Cutting Blade

$931.50

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Cutting Blade

Different types of curves can be created by software based on user definition

Heating elements are very brittle and could break if the separator is too wide or if too much pressure is applied on them

99% (horizontal polymer strip is made of modified polypropylene (PP) and  polyethylene naphthalate (PEN)) Length 61mm Width 4mm Thickness 0

44" (63mm) Inside Diameter 32  mm  ( 1

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Cutting Blade2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility

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