Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode The proper separator width should

The proper separator width should be selected to fit the shanks smoothly and avoid damage to the element

Stainless steel bottom contact plate and top plunger ensure good electrical conductivity

003 mm accuracy

item is sold in quantities of 1 pc for the unit price shown

You may order a load sensor to display pressure (click Pic

Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode The proper separator width shouldAluminum Metallic Film Film coated by E beam evaporation under vacuum below 10 6 torr evaporation rate: 0. 2 nanometer per second Aluminum Thickness: 3 microns Film Resistivity: 2. 65 micro ohm cm Film Crystallinity: Weak (111) oriented polycrystals Roughness, RMS: 4. 87 nm and < 10 nm Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0.