GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp Milling Jars x 200 mm L

x 200 mm L

which can be used as the electrode substrate of the lithium-ion battery or fuel cell

superconductor and magnetic epi-film due to the less mismatched lattice and stable chemical and physical properties

Dislocation Density:              5x10^9/ cm^2

Nominal FTO Film thickness: 200 nm

GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp Milling Jars x 200 mm LGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 5 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces