Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT Cu coated SiO2/Si Wafer (4

Cu coated SiO2/Si  Wafer (4 inch size)

PID automatic control via solid-state relay with 30 steps programmable

~25 mm  dia x 35 mm length  ( conical )

Material Information Materials: Silicone

Surface Density before rolling: 350g/m^2   Length: 300 mm

Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT Cu coated SiO2/Si Wafer (4Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1,000 ohm cm Size: 10 x 10 x 0. 5mm Orientation: (111) Polish: one side polished Surface roughness: < 5A Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater