Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick Ba0.5Sr0.5TiO3 Size: 1" x 1" x

Size:                                  1" x 1" x 0

Edge Orientation:   <100> +/-1 Deg with 4mm Length

coating for hydrophobicity

and CR2450 coin cells

Gauge Pressure Value to Force Conversion

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick Ba0.5Sr0.5TiO3 Size: 1" x 1" xSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation. Materials: Silicon on Sapphire Silicon EPI Layer: Silicon