GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp Wafer Holders )): 109 - 1011

)):   109 - 1011

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%) in an ultrasound bath for 5 min in order to remove the surface oxide layer

Instruments & Components PTFE Split Cell Mechanical Jig - for preventing electrolyte leakage  Dual Channel

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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp Wafer Holders )): 109 - 1011GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 20x20x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces