50 ohm.cm Al2O3 Sample Plate D quartz tube with aGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate D quartz tube with a"> 50 ohm.cm Al2O3 Sample Plate D quartz tube with aGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate D quartz tube with a"> 50 ohm.cm Al2O3 Sample Plate D quartz tube with aGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate D quartz tube with a – asequith.com

New Arrivals are Here-Fast Shipping from Our USA Warehouse

Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate D quartz tube with a

$125.35

Quantity
50 ohm.cm Al2O3 Sample Plate D quartz tube with a">
Description

D quartz tube with a built-in 2-inch adapter on each end

please contact us to order

( see picture below right )

Aluminum Oxide Substrates Al2O3

Working temperature: 1700°C (in air)  Max

Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate D quartz tube with aGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message