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InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US Max. current +3 A 2 lbs Material Al2O3 Cubage
InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US Max. current +3 A 2 lbs Material Al2O3 Cubage
$974.62
Description
2 lbs Material Al2O3 Cubage 500ml Size Click to enlarge the picture below for detailed size
Orientation: (110) +/-2 degree
Size: 10X10 x 0
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InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US Max. current +3 A 2 lbs Material Al2O3 Cubage2" InSb wafer (N type, undoped) Size: 2" dia x 0. 5mm thick Orientation <111>B + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)B + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration 5E13 3E14 @77K Mobility >400000 cm^2 V. s EPD <500 cm^ 2
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