99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Nominal ITO film thickness:115 (+/10%) – asequith.com

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AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Nominal ITO film thickness:115 (+/10%)

$109.25

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Description

Nominal ITO film thickness:115 (+/10%) nm

D 2-3/8"+/- 0

Polished surface:   Wafer surface is EPI polished via a special CMP procedure

Thermal Conductivity:      640

The unpolished Graphite in the center of holder is able to hold test samples up to 3’’ or 5'' diam

AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Nominal ITO film thickness:115 (+/10%)Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS

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