Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm Battery Electrode Fabrication Wafer Size: 50(+/_0

Wafer Size:                      50(+/_0

148Å    c= 13

Surface Polishing:          two sides optical polished

No return or refund for misusing or wrong storage which causes The lithium foil oxidation

Unique tip cone (patent pending) adapts to universal tips from nearly all manufacturers

Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm Battery Electrode Fabrication Wafer Size: 50(+/_0Single crystal Si (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 5 0. 525mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro