InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished Additive Growing Method: CZ
$948.75
Description
Growing Method: CZ
A thermal block must be placed at the end of the furnace to reduce heat radiation
New buyers must buy the software installed laptop to avoid trouble from installation
Doped with Fe
Specifications: TYPE: NH20-90*80-24
InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished Additive Growing Method: CZ2" InSb wafer (N type, Undoped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Shipping Notes
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