InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga It can be used to

It can be used to measure the sample's electrical properties at high temperatures

Option 2PCS 50mm sealing gasket for Stainless Steel Jar of milling machine (80ml) - MTI-PJ-ACC#03

Polished surface: One sideEPI polished via a special CMP procedure

container and top cover with O-ring

0 mm Border

InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga It can be used toInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing