GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates Parts should not be placed

Parts should not be placed directly onto the inside surface of a hot furnace tube increase thermal shock

Dimensions (Dia x Height) Case: 21

Modle EQ-Die-20D Die Sleeve Height 2" (50 mm) Diameter Sleeve ID

The operation is very safe without further certification

It is used to connect the coater for preventing wastewater from flowing into the pump

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates Parts should not be placedGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers