VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US CeO2 (Epi-film) EPD: <5000/cm^2

EPD: <5000/cm^2

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Surface roughness:         Ra < 10 A ( by AFM)

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Polish: one side polished by CMP

VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US CeO2 (Epi-film) EPD: <5000/cm^2Ge Wafer Specification Growing Method: VGF Orientation: VGF Ge Wafer (100) with 6 degree miscut toward<111> Wafer Size: 100 mm dia x 500 microns Surface Polishing: One side polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 3 0. 33 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 01 1. 03)