Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet Presses Wafer size: 3" dia x

Wafer size: 3" dia x 0

800ºC < 8hrs @ 400W (Air

Note: The door must be closed during use

Polished: One  side  polished

and emulsification of metals

Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet Presses Wafer size: 3" dia xSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation. Materials: Silicon on Sapphire Silicon EPI Layer: Silicon