SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be 4PO4 powder with surface carbon

4PO4 powder with surface carbon coating has the advantages of higher energy density

consisting of equal numbers of boron and nitrogen atoms

8*10-4S/cm

Pocket Size(mil):    L180*W150*D36 Pocket Size(mm):   L4

EQ-Lib-CGnP Graphene is a conductive material when preparing a Li-ion battery

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be 4PO4 powder with surface carbonPSpecifications Device Layer Diameter: 6" Type Dopant: N type P doped Orientation: <1 0 0>+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer