MgO (100) Epi polishing wafer 1" Dia x0.5mm, 2SP - MGa25D05C2 Muffle Furnace Mobility: 1850-1870 cmE2/V

Mobility:                             1850-1870 cmE2/V

and not covered by a warranty

Structure:                             Cubic

Aluminum foil (JIS A8021):                       0

which is a narrow gap layered semiconductor with a hexagonal structure

MgO (100) Epi polishing wafer 1" Dia x0.5mm, 2SP - MGa25D05C2 Muffle Furnace Mobility: 1850-1870 cmE2/VSpecifications of MgO substrate Size: 1" diameter x 0. 5mm + _ 0. 05 mm Orientation: (100) + 0. 5 Deg Polish: Two sides EPI polished by CMP technology with minimum sub surface damage. Surface finish (RMS or Ra): <10A Packing: The substrate is packed with 100 grade clean plastic bag under 1000 class clean room Precautions: MgO is sensitive to moisture, and must be stored in vacuum box. Warning: MgO crystal was grown by arc melting method and nature